Abstract
We report on the relationship between output current for quadrant photodetector (QPD) and bias voltage in silicon-based p-i-n (positive-intrinsic-negative) QPD examined using millisecond pulse laser (ms pulse laser) irradiation. The mechanism governing the relationship was further studied experimentally. The output current curves were obtained by carrying out QPD under different bias voltages (0-40 V) irradiated by ms pulse laser. Compared to other photodetectors, the relaxation was created in the output current for QPD which is never present in other photodetectors, such as PIN and avalanche photodetector (APD), and the maximum value of relaxation was from 6.8 to 38.0 μA, the amplitude of relaxation increases with bias value. The mechanism behind this relaxation phenomenon can be ascribed to the bias voltage induced Joule heating effect. With bias voltage increasing, the temperature in a QPD device will increase accordingly, which makes carriers in a QPD move more dramatically, and thus leads to the formation of such relaxation.
© 2020 Optical Society of Korea
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