Abstract

The interaction mechanism between external laser and Si avalanche photodiodes (Si-APDs) in practical circuits and the law of temperature increase are vital for the laser protection of Si-APDs. This study establishes the heating model of Si-APDs in an external circuit irradiated by a millisecond-pulse laser. The law of surface temperature increase in Si-APDs is determined via simulation and experiment. Results show that both laser energy density and external capacitance significantly affect the temperature increase. The theoretical simulation and experimental results are consistent, thereby validating the theoretical model.

© 2020 Optical Society of America

Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode

Dong Yuan, Wang Di, Wei Zhi, and Fu Tai Ran
Appl. Opt. 57(5) 1051-1055 (2018)

Numerical simulation of millisecond laser-induced damage in silicon-based positive-intrinsic-negative photodiode

Zewen Li, Xi Wang, Zhonghua Shen, Jian Lu, and Xiaowu Ni
Appl. Opt. 51(14) 2759-2766 (2012)

Thermal accumulation effect of a three-junction GaAs cell with multipulse laser irradiation

Lei Qi, Yali Liu, Hao Jing, Yanxin Xie, Xiaomin Yang, and Rongzhu Zhang
Appl. Opt. 59(6) 1611-1617 (2020)

Mechanisms for the millisecond laser-induced functional damage to silicon charge-coupled imaging sensors

Zewen Li, Xi Wang, Zhonghua Shen, Jian Lu, and Xiaowu Ni
Appl. Opt. 54(3) 378-388 (2015)

Experimental study of different pulse delays on the phenomenon of double shock waves induced by a millisecond–nanosecond combined-pulse laser

Jing-Yi Li, Wei Zhang, Lei-Ping Guo, Xiao-Yun Zhang, Bo-Shi Yuan, Ming Guo, and Guang-Yong Jin
Appl. Opt. 59(24) 7338-7342 (2020)