Abstract

Silicon-rich oxide films with controllable optical constants and properties are deposited by the reactive magnetron sputtering method on a Si target. The O/Si atomic ratio x of SiO_x is tuned from 0.12 to 1.84 by adjusting the oxygen flow rate, which is found to be a more effective way to obtain SiO_x films compared with changing the oxygen content [O₂/(Ar+O₂) ratio]. The optical properties of SiO_x films can be tuned from semiconductor to dielectric as a function of ratio x. The structures and components are also investigated by an x ray photoelectron spectroscopy analysis of the Si 2p core levels, the results of which exhibit that the structures of SiO_x can be thoroughly described by the random bonding model.

© 2016 Chinese Laser Press

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