Abstract
Compared to GaAs, little is known about hot-electron dynamics in narrow-gap semiconductors such as InAs and GaSb. These materials have a smaller bandgap, a smaller effective electron mass and a smaller electron-phonon coupling constant in comparison with GaAs. To investigate the dynamics of hot electrons in these materials, it is necessary to use mid- to far-infrared optical pulses with a photon energy low enough to avoid the generation of holes by (multi-photon) interband electron-hole pair generation. [1,2] Here, we show results of transient-grating experiments in n-type InAs and GaSb in which we time-resolve the ultrafast electron cooling of an electron distribution after optical excitation with intense sub-picosecond far-infrared pulses.
© 1996 Optical Society of America
PDF ArticleMore Like This
H. P. M. Pellemans, W. Th. Wenckebach, and P. C. M. Planken
QThD5 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996
P.C.M. Planken, H.P.M. Pellcmans, and W.Th. Wenckebach
QTuF1 European Quantum Electronics Conference (EQEC) 1996
T. Elsaesser, R.J. Bäuerle, R. Klann, and W. Kaiser
ThD1 International Conference on Ultrafast Phenomena (UP) 1990