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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThD5

Far-infrared subpicosecond transient grating measurement of electron cooling in indium arsenide

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Abstract

Compared with GaAs, little is known about hot-electron dynamics in narrow-gap semiconductors like InAs. In these materials the conduction band is much more strongly nonparabolic, and both the effective electron mass and the electron-phonon coupling constant are smaller compared with values for GaAs. To study hot-electron dynamics in the conduction band of these materials, ultrashort mid-or far-infared pulses are necessary to avoid the unwanted creation of electron- hole pairs by interband one-, two-, or even three-photon excitation.1

© 1996 Optical Society of America

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