Abstract

We present results of experiments in semiconductors performed with the (sub)-picosecond far-infrared pulses from the Free Electron laser for Infrared eXperiments FELIX laser at the FOM-institute for ‘Plasmaphysics’ Rijnhuizen in the Netherlands. As an example we show time-resolved measurements of electron cooling in the conduction band of n-type InAs and GaSb. These results were obtained in the wavelength range from 15 to 20 µm with pulses of 0.3 to 1 ps duration and an energy of up to 10 µJ. These wavelengths are sufficiently large to avoid multi-photon interband excitation of electron-hole pairs in these materials.

© 1996 IEEE