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Conferences > UP > 1990 > ThC > ThC22

Subpicosecond non Linearities of Semiconductor near Infrared Bragg Reflectors

G. Le Saux, J.P. Pocholle, P. Georges, J.P. Schnell, F. Salin, M. Papuchon, and A. Brun

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Abstract

Bragg reflector devices have been built in semiconductor materials. Many applications covering the realization of surface emitting laser diodes and mirrors activated under electrical field have been demonstrated [1]. We describe in this paper experimental results showing the optical non linearities induced by light carrier interactions in Ga1-xAlxAs / Ga1-y Aly As Bragg reflectors, in the subpicosecond regime.

© 1990 Optical Society of America

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