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Conferences > UP > 1990 > ThC > ThC17

Ultrafast Pump-Probe X-Valley Absorption Spectroscopy in GaAs

W. B. Wang, N. Ockman, M. A. Cavicchia, M. Van, and R. R. Alfano

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Abstract

The X valley plays an important role in hot carrier transport in GaAs1,2. In this paper, we present pump-probe IR absorption measurements to determine the time evolution of electrons in the X6 valley, the upper limit of the X6→Γ6 scattering time, tXΓ, the energy separation of the X6 and X7 bands at their minima, Δ7−6, and the density of states effective mass of the X7 valley.

© 1990 Optical Society of America

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