Abstract

The scattering of electrons between valleys of the conduction band in semiconductors plays an important role in determining the conductivity of the semiconductor and influences the response of many high-speed devices. In GaAs and InP. electrons in the Γ valley have low mass and high mobility, producing high conductivity in N-doped and photoexcited material. Appreciable scattering of electrons to the (anisotropic) high-mass satellite valleys lowers the conductivity and gives rise to the Gunn effect in the presence of high-de fields.

© 1992 Optical Society of America