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Charge Carrier Relaxation Processes in TbAs Nanoinclusions in GaAs Measured By Optical-Pump THz-Probe Transient Absorption Spectroscopy

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Abstract

By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This suggests the existence of a bandgap for TbAs nanoparticles.

© 2014 Optical Society of America

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