Abstract
The photoluminescence of the ternary semiconductor AlxGa1−xAs under intense picosecond excitation is investigated spectrally and temporal1y resolved. The experiments are performed at room temperature and 15 K in samples with direct and indirect gaps. From an analysis of the spectra, the dynamics and nature of the nonequilibrium carrier recombination processes are determined as well as band gap renormalization due to exchange and correlation effects.
© 1986 Optical Society of America
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