Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper TUGG17

Picosecond spectroscopy of indirect recombination in AlxGa1-xAs under hydrostatic pressure

Not Accessible

Your library or personal account may give you access

Abstract

The indirect bimolecular recombination in semiconductor alloys like AlxGa1–xAs is strongly influenced by alloy disorder. Indirect transitions of electrons from the X minima to the valence band can proceed via a virtual state at the Γ point without participation of a phonon.1 The matrix element of this transition depends, according to perturbation theory, on the energetic separation of the virtual state from the corresponding real state in the Γ band. This separation can be varied in a defined way by applying hydrostatic pressure on the sample.

© 1989 Optical Society of America

PDF Article
More Like This
Stimulated emission in indirect AlxGa1-xAs

H. Kalt, D. P. Norwood, Thomas F. Boggess, and Arthur L. Smirl
THR10 OSA Annual Meeting (FIO) 1987

Laser-indused Γ-X crossing in AlxGa1−xAs

H. KALT and W. W. RUHLE
WEE5 Quantum Electronics and Laser Science Conference (CLEO:FS) 1989

Time-resolved Photoluminescence Measurements in AlxGa1−xAs Under Intense Picosecond Excitation

K. Bohnert, H. Kalt, Thomas F. Boggess, Arthur L. Smirl, and R. Y. Loo
WE1 International Conference on Ultrafast Phenomena (UP) 1986

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved