Abstract
The indirect bimolecular recombination in semiconductor alloys like AlxGa1–xAs is strongly influenced by alloy disorder. Indirect transitions of electrons from the X minima to the valence band can proceed via a virtual state at the Γ point without participation of a phonon.1 The matrix element of this transition depends, according to perturbation theory, on the energetic separation of the virtual state from the corresponding real state in the Γ band. This separation can be varied in a defined way by applying hydrostatic pressure on the sample.
© 1989 Optical Society of America
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