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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WEE5

Laser-indused Γ-X crossing in AlxGa1−xAs

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Abstract

A crossover from a direct- to an indirect-gap semiconductor can be achieved in AlxGa1−xAs by applying hydrostatic pressure or increasing the AlAs-mole fraction x above the crossover composition xc. Here we report for the first time, we believe, on a laser-induced crossover for an x value close to xc. This effect is caused by the different renormalization of Γ and X gap under optical excitation.

© 1989 Optical Society of America

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