Abstract
A crossover from a direct- to an indirect-gap semiconductor can be achieved in AlxGa1−xAs by applying hydrostatic pressure or increasing the AlAs-mole fraction x above the crossover composition xc. Here we report for the first time, we believe, on a laser-induced crossover for an x value close to xc. This effect is caused by the different renormalization of Γ and X gap under optical excitation.
© 1989 Optical Society of America
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