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Conferences > UEO > 1995 > UTUC > UTUC3

Schottky-Collector Heterojunction Bipolar Transistors: Device Scaling Laws for fmax beyond 500 GHz

U. Bhattacharya, M. J. Mondry, G. Hurtz, I. Tan, R. Pullela, M. Reddy, J. Guthrie, M. J. W. Rodwell, and J. E. Bowers

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Abstract

Heterojunction bipolar transistors (HBTs) have high transconductance and extremely reproducible DC parameters. These attributes make HBTs the device of choice for high-speed precision analog and mixed analog-digital circuits. HBT cutoff frequencies are however considerably below that of high-electron-mobility field-effect-transistors (HEMTs).

© 1995 Optical Society of America

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