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Submicron Lateral Scaling of Vertical-Transport Devices Transferred-Substrate Bipolar Transistors and Schottky-Collecto Tunnel Diodes

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Abstract

Transferred-substrate HBTs, fabricated with 0.7 micron emitters and 1.6 micron collectors, obtain 277 GHz power-gain cutoff frequencies fmax At 0.1 µm lithography, the device should obtain ~ 500 GHz fmax Deep submicron Schottky-collector resonant tunnel diodes (SRTDs) have estimated 2.2 THz cutoff frequencies. 64-element monolithic SRTD array oscillated at 650 GHz.

© 1997 Optical Society of America

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