Abstract
The dynamic characteristics of InGaAsP semiconductor lasers is a subject of great interest not only for the purposes of understanding the very high speed operation of lasers, but also for understanding AM and FM modulation characteristics, laser intensity noise, laser linewidth, laser chirping and all other dynamic and noise related characteristics. Although much work has been done on understanding the dependence of the laser resonant frequency f on device geometry and bias power1, relatively little analysis has been made of the other key dynamic parameter, the damping rate.
© 1987 Optical Society of America
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