Abstract

InGaAsP/InP diode lasers emitting at 1.3 and 1.55 µm wavelengths are practically used in long-haul and high-bit rate transmission systems. Buried hetrostructure (BH) is important structure owing to the low threshold and the fundamental transverse mode lasing. Recently high-bit rate systems with more than 1 Gb/s are proposed and field trials have already been performed. For the purpose to obtain high-bit rate operation in BH diode lasers, there are two dominant factors that must be satisfied; one is the reduction of the parasitic capacitance and another is the increase in the relaxation oscillation frequency. In the following, I review them.

© 1987 Optical Society of America