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Conferences > SLA > 1987 > TuD > TuD8

Performance of a High Reliability Low Threshold InGaAsP Ridge Waveguide Lasers Emitting at 1.3µm

A.A.M. Rashid, R.S. Butlin, A.P. Janssen, and T.E. Stockton

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Abstract

This paper describes the structure and performance of a High Reliability Ridge Waveguide Laser, suitable for very high bit rate transmission. The device is grown on an Inp substrate using planar LPE with Ge doped Inp. Ridge structure is formed by etching two channels as shown in the schematic diagram (Figure 1).

© 1987 Optical Society of America

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