A Simplified Thermal Model For Calculating The Maximum CW Output Power From A Stripe Geometry InGaAsP/InP Laser.

M. Arvind; H. Hsing; L. Figueroa

doi:10.1364/SLA.1987.TuD10

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper TuD10
•https://doi.org/10.1364/SLA.1987.TuD10

A Simplified Thermal Model For Calculating The Maximum CW Output Power From A Stripe Geometry InGaAsP/InP Laser.

M. Arvind, H. Hsing, and L. Figueroa

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
ISBN:

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GaInAsP Lasers (TuD)

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M. Arvind, H. Hsing, and L. Figueroa, "A Simplified Thermal Model For Calculating The Maximum CW Output Power From A Stripe Geometry InGaAsP/InP Laser.," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper TuD10.

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Abstract

One of the most important aspects of semiconductor laser design is the ability to calculate the maximum CW output power which is limited by either thermal considerations, or local heating at the facets in the active region. Such calculations are needed in the design of high power GaAs/GaAlAs and InGaasP/InP lasers, which are useful as light sources in printers, optical communication systems and optical memory systems. The importance of thermal considerations is highlighted as a result of the increase in laser threshold current density, and the decrease in laser efficiency (due to increase in nonradiative auger recombination) at high temperatures.

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