Abstract
Self-organized, quantum dots formed under Stranski-Krastanav growth has been an active area of quantum structure research. Traditional quantum dots grown with III-V materials usually have a normal band lineup, where the electron and hole are confined within the dot, and spatially direct excitons are observed in these structures.1,2 Highly strained material systems such as GaSb/GaAs exhibit a staggered band lineup, where electrons and holes are spatially separated. In this paper, we report on the time-resolved optical characterizations of spatially indirect excitons in GaSb/GaAs quantum dots.
© 1996 Optical Society of America
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