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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThC4

Time-resolved optical investigation of spatially indirect excitons in GaAs/GaSb quantum dots

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Abstract

Self-organized, quantum dots formed under Stranski-Krastanav growth has been an active area of quantum structure research. Traditional quantum dots grown with III-V materials usually have a normal band lineup, where the electron and hole are confined within the dot, and spatially direct excitons are observed in these structures.1,2 Highly strained material systems such as GaSb/GaAs exhibit a staggered band lineup, where electrons and holes are spatially separated. In this paper, we report on the time-resolved optical characterizations of spatially indirect excitons in GaSb/GaAs quantum dots.

© 1996 Optical Society of America

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