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Conferences > IQEC > 1994 > QWE > QWE3
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper QWE3

Time-resolved spectroscopy of InGaAs/GaAs quantum dots

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Potroff

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Abstract

We report on an optical study of strained InGaAs/GaAs quantum dots grown by molecular-beam epitaxy (MBE). The InGaAs/ GaAs quantum-dots samples are formed in situ by using the coherent islanding effect1 of InGaAs. These dots have typical mean diameters ranging from 125 to 275 Å, with a standard deviation of 20 Å. The dot density is between 109 cm-2 and 1011 cm-2 The size of dots depends on the growth parameters. A variety of samples were grown and characterized. The samples reported here have a quantum well and quantum dots.

© 1994 Optical Society of America

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