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We have performed photoluminescence (PL) and PL excitation (PLE) experiments on strain-induced InGaAs QDs showing remarkably high optical quality. As depicted schematically in Fig. 1a, InP islands have been grown on an InGaAs/ GaAs single quantum well structure leading to a strain-induced lateral potential profile of considerable energetic depth in the region below the InP stressors. The islands are 75 run wide and 22 nm high as determined by atomic force microscopy. The island density is approximately 2 X 109 cm-2. Figure lb shows the strain-induced, parabolic-like lateral potential profiles for electrons in the conduction band and heavy-holes in the valence band induced below the InP stressors.
© 1996 Optical Society of America
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