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Photoluminescence Characteristics Of Ge1-xSnx Nanostructures Grown On Si Substrates Using Molecular Beam Epitaxy

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Abstract

Near infrared light emission in the range of 1.5-1.8 μm, sustaining upto 110 K temperature has been obtained from direct band gap transition in Ge1-xSnx nanostructures grown by molecular beam epitaxy on P-Si(100) substrates.

© 2014 Optical Society of America

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