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Conferences > CLEO_SI > 2014 > SM2H > SM2H.5

Extended Infrared Absorption to 2.2 μm with Ge1-xSnx Photodetectors Grown on Silicon

Benjamin R. Conley, Liang Huang, Sayed Amir Ghetmiri, Aboozar Mosleh, Wei Du, Greg Sun, Richard Soref, John Tolle, Hameed A. Naseem, and Shui-Qing Yu

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Abstract

Thin film Ge1-xSnx photodetectors fabricated on Si using a CMOS compatible process had responsivities at 1.55 μm of 6.59, 1.49, 2.63, and 0.84 mA/W for 0.9, 2.57, 3.2, and 7.0 % Sn. Spectral response for a Ge0.93Sn0.07 photodetector had extended infrared response out to 2.2 μm.

© 2014 Optical Society of America

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