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Optical Emission Characteristics of Compressively Strained Ge Films

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Abstract

Compressively strained, ~2 nm thick Ge film has been grown on relaxed Si0.5Ge0.5 virtual substrate using molecular beam epitaxy. Grown film exhibits no-phonon assisted direct optical transition at around 1520 nm upto 300 K.

© 2014 Optical Society of America

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