Nonequilibrium Phonons and Disorder in AlxGa1-xAs

J.A. Kash; J.C. Tsang; S.S. Jha

doi:10.1364/PEO.1987.WE8

Topical Meeting on Picosecond Electronics and Optoelectronics
Technical Digest Series (Optica Publishing Group, 1987),
paper WE8
•https://doi.org/10.1364/PEO.1987.WE8

Nonequilibrium Phonons and Disorder in Al_xGa_1-xAs

J.A. Kash, J.C. Tsang, and S.S. Jha

Picosecond Electronics and Optoelectronics 1987

Incline Village, Nevada United States
14–16 January 1987
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J. A. Kash, J. C. Tsang, and S. S. Jha, "Nonequilibrium Phonons and Disorder in AlxGa1-xAs," in Topical Meeting on Picosecond Electronics and Optoelectronics, Technical Digest Series (Optica Publishing Group, 1987), paper WE8.

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Abstract

Despite alloy disorder, picosecond Raman measurements show significant nonequilibrium phonon effects in Al_xGa_1-xAs. The virtual crystal approximation is demonstrated to apply. Implications for heterojunction devices are considered.

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