Abstract

The advantages of GaAs on Si technology have stimulated a great deal of interest [1], [2]. Although Si was studied extensively as the substrate material for microwave monolithic integration because of its high thermal conductivity, well-established technology, mechanical strength, and availability in larger diameter [3]-[5], it lacks millimeter-wave three terminal devices which is now afforded with GaAs on Si [6]. Dielectric losses in GaAs on Si, however, must be small in order for this composite technology to be practical. We have thus undertaken a theoretical study of the shielded microstrip lines on GaAs on Si up to 100 GHz for various parameters in Si and GaAs.

© 1987 Optical Society of America