Abstract

With the development of very high speed GaAs devices such as heterojunction bipolar transistors, GaAs MESFETs, TEGFETs and MODFETs, with response well into the picosecond regime, comes the need for new instrumentation to directly characterize these ultrafast devices. Requirements of such instrumentation include good spatial resolution, i.e., a few micrometers, a temporal response of few ps, and minimum interference with the circuit being tested.

© 1985 Optical Society of America