Abstract

The speed performance of simple integrated circuits made from III-V materials in general, now rivals Josephson junction devices for all time speed records. In particular, the most developed technology is that involving GaAs (as a MESFET) or GaAs and (AlGa) As in combinations such as the selectively doped heterostructure transistor (SDHT, sometimes called HEMT, TEGFET, MODFET) and the heterojunction bipolar transistor. This talk will compare and contrast the performance of these GaAs based approaches. Speculation about the near future will be attempted.

© 1985 Optical Society of America