Abstract

Picosecond optoelectronics provides the capability to measure the frequency response of solidstate devices with much greater bandwidth than conventional techniques.¹ Short electrical pulses are fed into device terminals, and the output is optoelectronically sampled to measure the device impulse response function. The Fourier transform of this data yields the frequency response curve. All elements of the scattering matrix (S matrix) can be obtained through the use of various combinations of device terminals as input and output ports. Thus all information obtained from conventional CW network analyzer techniques is available from the time-domain picosecond optoelectronic data, with excellent bandwidth capability and electronic simplicity. Here we present impulse response measurements of a submicron field effect transistor.

© 1985 Optical Society of America