Abstract

For multichip modules (MCMs) holographic optical interconnects offer several advantages. Here, we present the design and fabrication of diode laser arrays for MCMs. In our case, the packing densities and the astigmatic beam are not the key issues; that is why edge-emitting arrays are chosen over vertical cavity surface-emitting lasers. 1-D arrays are fabricated from a single quantum well GRIN-SCH structure, designed to operate around 780 nm for detection efficiency of Si photodetectors integrated with the processing elements (PEs). Arrays are composed of 300 μm long 32/16 elements at 250/500 μm pitch, respectively. For data transmission between the PEs, the laser elements are independently addressable. Major features include low-threshold, mode stability, wavelength uniformity, and self-aligned bonding pads for integration with PEs, holographic elements, and Si mirror chips. Results will be presented to address these issues.

© 1992 Optical Society of America