Abstract

We have used the heterojunction bipolar transistor (HBT) as the device technology to perform the electronic functions in monolithically integrated photoreceivers. Our approach has been motivated by the fact that HBTs have already demonstrated high-speed performance, even with relaxed design rules, and by noise analysis, which suggests that bipolar transistor-based preamplifiers will have sensitivities favorable for optical communication systems. We will present our results of p-i-n photodetectors integrated with HBT-based preamplifiers realized in the InP/InGaAs material system. Sensitivity measurements at high bit rates confirm that the performance of these monolithic receivers is close to that of the best p-i-n hybrid receivers.

© 1992 Optical Society of America