Abstract

High-speed capability over 10 Gbit/s is one of the most attractive features of monolithically integrated photoreceivers. Receiver bandwidths ranging from 3 to 6 GHz have been reported using hetero bipolar transistors (HBTs)¹ and high electron mobility transistors (HEMTs).^2-5 However, the bandwidths of monolithic integrated photoreceivers have lagged behind those of hybrids because of the immaturity of InP-based optoelectronic device integration technology. Meanwhile, the planar-doping technique has a number of inherent advantages⁶ including high transconductance and excellent uniformity, even though there have been few demonstrations of high-speed integrated circuits using planar-doped InAlAs/InGaAs HEMTs.

© 1992 Optical Society of America