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MONOLITHICALLY INTEGRATED InP/InGaAs p-i-n/HBT TRANSIMPEDANCE PHOTORECEIVER

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Abstract

With the rapid development of lightwave communications, low cost high performance optical receivers suitable for the 1.3-1.6 μm wavelength range are needed for a variety of systems applications. Monolithic integration of the photodetector with a low noise preamplifier offers the potential advantages of reduced parasitic capacitances and inductances, improved device performance, higher reliability and lower manufacturing costs. Recently, heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been demonstrated with excellent high frequency performance[1]. They are very promising devices to realize high speed integrated circuits and have the potential to be integrated with long wavelength photonic devices. In addition, noise calculations show that as the bit rate increases, receivers based on bipolar transistors are expected to have a sensitivity at least as good if not better than those based on FETs[2].

© 1990 Optical Society of America

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