Abstract
Advances in material growth and device technologies have permitted the demonstration of ultra-high-speed InP/InGaAs heterojunction bipolar transistors (HBTs), as well as integrated circuits based on these high performance devices. In this talk, progress in the extension of these technologies to HBT-based, monolithic optoelectronic integrated circuit (OEIC) phototreceivers for the long-wavelength (1.3-1.6 µm) region will be described.
© 1990 Optical Society of America
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