Abstract

In the present work we describe an in-situ excimerlaser-patterned projection etching process used on a molecular beam epitaxy machine which demonstrates the basic processing steps required for 3-D structures in GaAs. The system has two ultrahigh-vacuum chambers which are isolated by a gate valve. In one chamber, GaAs is grown by elemental-source molecular beam epitaxy. In the second chamber, chlorine gas is introduced through a leak valve, and the sample is exposed to an ArF excimer laser (193 nm) through a single-element optical projection system. Samples are transferred between the two chambers under ultrahigh-vacuum conditions.

© 1989 Optical Society of America