Abstract

The infrared detector material Cd_xHg_1-xTe (CMT) has become the most widely used narrow gap semiconductor for photon detection, despite problems such as high volatility of Hg, high interdiffusion coefficient for Hg and Cd, fast dopant diffusion and large segregation coefficients from the melt. The key to overcoming these difficulties lies with low temperature growth of epitaxial CMT and low temperatures for device processing. Photochemical deposition offers an elegant solution to these problems by removing the need for heat to dissociate metal-organics on the substrate. This review will concentrate on the conditions needed for epitaxial growth of these materials at temperatures below 300°C, more than 100°C below temperatures required for the pyrolytic growth process.

© 1985 Optical Society of America