Abstract

InP and InGaAs-InGaAsP alloys lattice-matched to InP are crucial to the fabrication of optical sources and detectors that operate at wavelengths of minimum loss and dispersion of currently available optical fibers (1.55 and 1.3 μm). Optimization and economical production of these devices require precise control of layer thickness and composition across large-area wafers. We have developed a new vapor phase epitaxial technique that is particularly well-suited to the growth of such multilayer structures required for long-wavelength optoelectronic applications.

© 1985 Optical Society of America