Abstract

Laser-assisted reactions are being actively investigated as a means for depositing compound semiconductor films at low temperatures. Low-temperature growth is particularly important for the growth of HgTe/CdTe superlattice structures, where the growth temperature must be minimized to prevent Hg interdiffusion between layers. Currently available source materials are not efficiently pyrolyzed below 250°C, a temperature incompatible with the maintenance of abrupt interfaces.

© 1988 Optical Society of America