Abstract

Metal-semiconductor-metal photodiodes (MSM-PDs) are potential candidates for applications in high-speed optical receiver circuits because they offer advantages of low device capacitance and process compatibility with MESFET. For short distance optical links, transmission wavelengths around 800 nm are used. Therefore, silicon as well as III-V semiconductors such as GaAs can be chosen as the light detecting materials. However, Si MSM-PD can be easily integrated with Si circuity that dominates information processing, and hence avoiding hybridization between III-V detectors and Si circuit which will negatively affect cost in the production point of view.

© 1996 Optical Society of America