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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuL20

Measurement and interpretation of the high-frequency characteristics of InAlAs/InGaAs/InP MSM photodetectors

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Abstract

The metal-semiconductor-metal (MSM) photodetector is an excellent candidate for integration in high-speed long-wavelength optoelectronic (OEIC) receivers because of its low capacitance-per-unit-area. In particular, the low capacitance of the MSM presents minimal input loading to the first-stage amplifying transistor.

© 1996 Optical Society of America

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