Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuL23

High-speed metal-semiconductor-metal photodetector formed by silicon trenches

Not Accessible

Your library or personal account may give you access

Abstract

Silicon metal-semiconductor-metal photodetectors (MSM-PDs) are attractive for use in the 0.8-μm wavelength band in optical communication systems due to their much lower cost for very large-scale integration with silicon circuitry. However, the intrinsic disadvantage of silicon is its long absorption depth ( ~ 12 μm) at 830 nm, which is the operation wavelength of gallium arsenide lasers, causing a tradeoff between responsivity and bandwidth.

© 1996 Optical Society of America

PDF Article
More Like This
High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodector for low-voltage applications

J. Y.L. Ho and K.S. Wong
ThN4 International Quantum Electronics Conference (IQEC) 1996

High-frequency ion-implanted silicon metal-semiconductor-metal photodetectors

D. T. D. C. Jacobson and N. K. Dutta
CWD2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Resonant cavity photodetectors in silicon-on-insulator

B. Pezeshki, D. M. Kuchta, J. J. Welser, and J. A. Kash
CTuW6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved