Abstract
Silicon metal-semiconductor-metal photodetectors (MSM-PDs) are attractive for use in the 0.8-μm wavelength band in optical communication systems due to their much lower cost for very large-scale integration with silicon circuitry. However, the intrinsic disadvantage of silicon is its long absorption depth ( ~ 12 μm) at 830 nm, which is the operation wavelength of gallium arsenide lasers, causing a tradeoff between responsivity and bandwidth.
© 1996 Optical Society of America
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