Abstract
Current trends in the silicon microelectronics industry are driving MOS devices to deep sub-micron dimensions, and corresponding gate oxide layers to sub-50-Å thicknesses, thus tightening requirements for the control of Si(001)/SiO2 interfacial microroughness during device processing.1 Certain cleaning chemistries roughen the silicon surface at the angstrom level, resulting in poor reliability for MOS devices.2 In this paper, we show that optical interface second harmonic generation3 (ISHG) can measure angstrom-scale microroughness at buried Si(001)/SiO2 interfaces while the oxide is present.
© 1994 Optical Society of America
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