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Modifications of semiconductor gain media have been computed corresponding to the Rayleigh-gain coherent energy transfer in atoms,[1-3] but the new peak of the gain curve is shifted by, at most, about 1 GHz. Here we report evidence for much larger peak shifts (up to 50 GHz) by cw injection of up to 3 mW into a vertical-cavity surface-emitting laser (VCSEL). Understanding local modifications of the cw semiconductor gain profile is of fundamental semiconductor physics interest and is crucial to a first-principles description of diode-laser and VCSEL instabilities.
© 1992 IQEC
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