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Conferences > IQEC > 1992 > ThD > ThD6
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper ThD6

On the Transition from 2-Dimensional to 3-Dimensional Electroabsorption as Quantum Well Barriers are Lowered

K. W. Goossen, J. E. Cunningham, M. Williams, F. Storz, and W. Y. Jan

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Abstract

Recently we reported the observation of strong room temperature excitons in GaAsAlxGa1-xAs multi-quantum wells (MQW) for x as low as 0.02.[1] This observation has important technological ramifications foroptoelectronic devices due to enhanced electroabsorption resulting from the rapid ionization of the exciton with field,[1] and since the escape time of photoexcited carriers in MQW’s with x ≤ 0.04 is equivalent to bulk GaAs,[2] which results in superior high intensity modulation.[3]

© 1992 IQEC

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