Abstract
Recently, we reported the observation of strong room-temperature excitons in GaAsAlxG1-XAs multiple-quantum wells (MQWs) for x as low as 0.02.1 This observation has important technological ramifications for electro-optic devices because of enhanced electroabsorption resulting from the rapid ionization of the exciton with field,1 and because the escape time of photoexcited carriers in MOWs with x ≤ 0,04 is equivalent to bulk Ga As,2 which results in superior high- intensity modulation.3
© 1992 Optical Society of America
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