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  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper ThD4

Radiative Exciton Lifetime in GaAs Quantum Wires Fabricated by MOCVD Selective Growth

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Abstract

Quantum wires and quantum boxes haves recently received great attention since new physical phenomena with possible application to semiconductor lasers are expected.[1 2] Although various types of quantum wires have been so far fabricated, radiative lifetime in the quantum wires has not been sufficiently investigated. In this paper, we discuss the radiative exciton lifetime in GaAs quantum wires fabricated by an MOCVD selective growth technique. The results indicate that the radiative exciton lifetime in the quantum wires is longer than that in the quantum wells.

© 1992 IQEC

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