Abstract

The effect of a random potential which is weak relative to the exciton’s binding energy on the dynamics of direct and indirect Wannier excitons in semiconducting alloys (three-dimensional) and in quantum wells and superlattices (two-dimensional) is discussed. The potential fluctuations broaden the direct exciton line into a band in which excitons of sufficiently low energy are localized, being separated from the delocalized ones by an effective mobility edge.

© 1987 Optical Society of America