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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper THEE2

Excitons, localization, and interfaces in wide gap II–VI compound semiconductors and quantum wells

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Abstract

The development of advanced epitaxial techniques has increased the vitality for many members of the semiconductor family, including more recently the wide gap II-VI compound semiconductors, by producing versatile superlattice and quantum-well structures where lower dimensional electronic and other phenomena can be examined.

© 1987 Optical Society of America

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