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Room temperature c.w. GaAs surface-emitting laser with integrated Bragg reflector

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Abstract

The surface-emitting laser [1,2] is expected to revolutionize semiconductor laser array technology. It will permit to reduce beam divergence and increase the emitted power through utilisation of a larger aera of the wafer. The ultrashort cavity also provides for essentially single longitudinal mode operation. It was shown recently that Fabry-Perot resonators with all-dielectric mirrors can be grown [3,4], and that these structures can lase when photopumped [5]. Similar structures can also be used for efficient photonic switching. In this paper, we demonstrate the first low threshold photopumped surface-emmiting laser that operates c.w. at room temperature.

© 1988 Optical Society of America

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